bfp 280 oct-12-1999 1 npn silicon rf transistor for low noise, low-power amplifiers in mobile communications systems (pager, cordless telephone) at collector currents from 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900 mhz vps05178 2 1 3 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfp 280 res 1 = c 2 = e 3 = b 4 = e sot-143 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 8 v collector-emitter voltage v ces 10 collector-base voltage v cbo 10 emitter-base voltage v ebo 2 collector current i c 10 ma base current i b 1.2 total power dissipation , t s 108 c 1) p tot 80 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance junction - soldering point r thjs 520 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bfp 280 oct-12-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values unit symbol min. max. typ. dc characteristics v v (br)ceo collector-emitter breakdown voltage i c = 1 ma, i b = 0 8 - - a collector-emitter cutoff current v ce = 10 v, v be = 0 - 100 - i ces collector-base cutoff current v cb = 8 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 1 a dc current gain i c = 3 ma, v ce = 5 v h fe 30 100 200 -
bfp 280 oct-12-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values max. min. typ. ac characteristics (verified by random sampling) transition frequency i c = 6 ma, v ce = 5 v, f = 500 mhz f t 5 7.5 ghz - c cb pf - collector-base capacitance v cb = 5 v, f = 1 mhz 0.2 0.35 collector-emitter capacitance v ce = 5 v, f = 1 mhz 0.27 - - c ce emitter-base capacitance v eb = 0.5 v, f = 1 mhz 0.3 - c eb - 1.5 2 f - - noise figure i c = 1.5 ma, v ce = 5 v, z s = z sopt , f = 900 mhz f = 1.8 ghz db - - - - g ms power gain, maximum stable f) i c = 3 ma, v ce = 5 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz 19 15 - - 15 11 - - | s 21e | 2 transducer gain i c = 3 ma, v ce = 5 v, z s = z l = 50 , f = 900 mhz f = 1.8 - - 1 g ms = | s 21 / s 12 |
bfp 280 oct-12-1999 4 spice parameters (gummel-poon model, berkley-spice 2g.6 syntax) : transistor chip data bf = 89.888 - ikf = 0.073457 a br = - 20.238 ikr = 0.012696 a rb = 15 re = 2.4518 vje = 0.70035 v xtf = 0.21585 - ptf = 0 deg mjc = 0.30017 - cjs = 0ff xtb = 0- fc = 0.96275 - is = 6.472 fa vaf = 25.609 v ne = 1.6163 - var = v 5.6909 nc = 1.0651 - rbm = 14.999 cje = 36.218 ff tf = ps 11.744 itf = 6.2179 ma vjc = 1.1943 v tr = ns 2.3693 mjs = 0- xti = 3 - nf = 1.0801 - ise = 15.596 fa nr = 0.83403 - isc = 1.409 fa irb = 0.031958 ma rc = 6.989 mje = 0.69773 - vtf = 0.2035 v cjc = 252.99 ff xcjc = 0.19188 - vjs = 0.75 v eg = 1.11 ev tnom 300 k all parameters are ready to use, no scalling is necessary. extracted on behalf of siemens small signal semiconductors by: institut fr mobil-und satellitentechnik (imst) 1996 siemens ag package equivalent circuit: l bi = 0.89 nh l bo = 0.73 nh l ei = 0.4 nh l eo = 0.15 nh l ci = 0nh l co = 0.42 nh c be = 189 ff c cb = 15 ff c ce = 187 ff valid up to 6ghz for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com/products/discrete/index.htm
bfp 280 oct-12-1999 5 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 mw 100 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bfp 280 oct-12-1999 6 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 2 4 6 8 v 12 v cb 0.0 0.1 0.2 0.3 pf 0.5 c cb 0 2 4 6 8 v 12 v cb 0.0 0.1 0.2 0.3 pf 0.5 c cb transition frequency f t = f ( i c ) v ce = parameter 0 2 4 6 8 ma 11 i c 1 2 3 4 5 6 7 8 ghz 10 f t 10v 8v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 0.9ghz v ce = parameter 0 2 4 6 8 ma 11 i c 8 10 12 14 16 18 db 22 g 10v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 1.8ghz v ce = parameter 0 2 4 6 8 ma 11 i c 4 6 8 10 12 14 db 18 g 10v 2v 1v 0.7v 3v
bfp 280 oct-12-1999 7 intermodulation intercept point ip 3 = f ( i c ) (3rd order, output, z s = z l =50 ) v ce = parameter, f = 900mhz 0 2 4 6 8 ma 11 i c -12 -8 -4 0 4 8 12 dbm 20 ip 3 8v 5v 3v 2v 1v power gain g ma , g ms = f ( v ce ):_____ | s 21 | 2 = f ( v ce ):--------- f = parameter 0 2 4 6 8 v 12 v ce 6 8 10 12 14 16 18 db 22 g 0.9ghz 1.8ghz 0.9ghz 1.8ghz i c =3ma power gain | s 21 | 2 = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f 4 6 8 10 12 14 16 db 20 s 21 10v 1v 0.7v i c =3ma power gain g ma , g ms = f ( f ) v ce = parameter 0.0 0.5 1.0 1.5 2.0 2.5 ghz 3.5 f 0 5 10 15 20 25 30 db 40 g 10v 1v 0.7v i c =3ma
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